OSA | Fabriion of monolithic diamond …
A monolithic diamond photodetector with microlenses is fabried by etching microlens arrays (MLAs) on single crystal diamond surface and patterning tungsten electrode strips on the edge of these arrays. Firstly, compact MLAs are etched on half of diamond sample surface by thermal reflow method. Secondly, via magnetron sputtering technique, two sets of interdigitated tungsten electrodes are
OSA | Enhanced UV absorption of GaN photodiodes …
Light absorption at the surface of a photodiode can be enhanced by employing nanostructures smaller than the wavelength of interest. In this study, a ZnO quantum dot (QD) coating layer was investigated for improving the light absorption of gallium nitride (GaN) ultraviolet (UV) photodiodes. A GaN surface coated with a ZnO QD solution exhibited significantly lower surface reflection than an
Khaled Chahrour Ph.D. - Postdoctoral Fellow - …
Moreover, the UV photodetector revealed the current gain is 7, response time is 0.77 s and decay time is 0.79 s, respectively at biased voltage 4 V. As mentioned above, the UV photodetector based on mixture of anatase and rutile phase nanotube arrays is a recommended nano-optoelectronic apparatus that is remarkably applicable over Ultraviolet band.
Broadband SiC based UV photodetector with …
Silicon Carbide (SiC) detector chip inside Sophistied electronics make a TOCON a reliable component in harsh environments as well as for extremely low or extremely high UV radiation. But what makes the TOCON a quasi eternally living sensor is the sglux in-house pro-duced SiC detector chip featured by a PTB-reported extreme radiation hardness.
Silicon Carbide Nanowires and Electronics | SpringerLink
Abstract. Silicon carbide (SiC) is recognized as one of the most important candidates of the third-generation semiconductors, owing to their superior properties such as outstanding mechanical properties, excellent chemical inertness, high thermal stability, as well as high thermal conductivity, which allow the SiC materials having the unique advantage to serve under high-temperature/high
Quantum Carrier Reinvestment-Induced Ultrahigh and
2019-5-24 · In an earlier work, we had reported a method that enables graphene–silicon junctions to display exceptionally high photovoltaic responses, exceeding 107 V/W. Using a completely different method that has recently been reported to result in ultrahigh gain, we now show that these junctions can also demonstrate giant photocurrent responsivities that can approach ∼107 A/W. Together, these
Diamond Dry Etching Process (RIE or ICP-RIE) - …
2020-5-29 · One of the promising device appliions of diamond is the diamond-based power transistor. Currently, Gallium Nitride (GaN) and Silicon Carbide (SiC) power electronics are actively being developed to replace conventional silicon-based power devices with high breakdown voltage, high speed switching and low on-resistance. Diamond can be another candidate material for power electronics due to its
2014-5-14 · UV glass window eliminates noise caused by parasitic resistance paths inside the package or EMI. A TOCON is a per-fect solution for each industrial UV sensing appliion starting from flame detection at pW/cm2 level up to UV curing lamp control at W/cm2 level. This thirteen orders of magnitude range is covered by ten different TOCONs that differ
NASA TechPort - Project Data
NASA''s Technology Portfolio Management System (TechPort) is a single, comprehensive resource for loing detailed information about NASA-funded technologies. Those technologies cover a broad range of areas, such as propulsion, nanotechnology, robotics, and human health. You can find useful information on NASA''s technologies in TechPort, including descriptions of technologies, images, and
Nanomaterials | Free Full-Text | Bandgap-Tuned 2D …
This study presents a fast and effective method to synthesize 2D boron nitride/tungsten nitride (BN–WN) nanocomposites for tunable bandgap structures and devices. A few minutes of synthesis yielded a large quantity of high-quality 2D nanocomposites, with which a simple, low-cost deep UV photo-detector (DUV-PD) was fabried and tested. The new device was demonstrated to have …
SBIR-16-2-S1.04-7518 | Abstract - A Silicon Carbide
2018-4-26 · A Silicon Carbide Foundry for NASA''s UV and High Temperature CMOS Electronics Needs: SMALL We will also design and fabrie an integrated photodetector and 3-Transistor pixel for active readout. process available to NASA and provide a process development kit for use of our fabriion facility to prototype new appliion specific SiC
Optical properties and photoconductivity of amorphous
2005-11-10 · Silicon carbide (Si-C) and silicon nitride (Si-N) have wide appliions in mechanical, optical and electronic devices . Carbon nitride, a highly promising hard material, has also received increasing attention recently . More recently, a new class of ternary silicon carbon nitride (SiCN) materials with large (several tens of microns)
Nonpolar (112̅0) GaN Metal–Semiconductor–Metal
2020-6-3 · This article reports a nonpolar GaN metal–semiconductor–metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabried on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN
Lineup of Si photodiodes for UV to near IR, radiation
For UV to near IR S1336 series 9 Yes S1337 series (excluding S1337-21) 9 Yes S1337-21 10 Yes Unsealed S2551 10 Yes S2281 series 10 Yes For UV to near IR (IR sensitivity suppressed type) S1226 series 11 Yes S1227 series 11 Yes S2281-01 11 Yes For UV monitor S12698 series 12 Yes For visible range to near IR S2386 series 13 Yes S12915 series 14 Yes
UVC-only SiC based UV photodetector with integrated …
2018-1-17 · A TOCON is a 5 Volt powered UV photodetector with integrated amplifier converting UV radiation into a 0… 5V voltage output. The V out pin of the TOCON can be directly connected to a controller, a voltmeter or any other data analyzing device with voltage input. Highly modern electronic components and a hermetically sealed metal housing with UV
Recent progress of SiC UV single photon counting
Abstract: 4H-SiC single photon counting avalanche photodiodes (SPADs) are prior devices for weak ultraviolet (UV) signal detection with the advantages of small size, low leakage current, high avalanche multipliion gain, and high quantum efficiency, which benefit from the large bandgap energy, high carrier drift velocity and excellent physical stability of 4H-SiC semiconductor material.
[UV PHOTODETECTOR] - SHEU JINN-KONG
2005-1-20 · 4. The UV photodetector of claim 1, wherein the substrate is comprised of an aluminum oxide (sapphire) substrate, a silicon carbide (SiC) substrate, a zinc oxide (ZnO) substrate, a silicon substrate, a gallium phosphide (GaP) substrate, and a gallium arsenide (GaAs) substrate. 5.
DEVELOPING EPITAXIAL GRAPHENE ELECTRODES FOR …
2019-7-8 · SILICON CARBIDE BASED OPTOELECTRONIC DEVICES In this thesis work, I studied the fabriion and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and silicon carbide semiconductor.
Ultraviolet Sensors Based on Two-Dimensional Zinc …
2016-8-31 · In this chapter, we review the appliion of zinc oxide (ZnO) in ultraviolet (UV) sensing and emphasise on the two-dimensional (2D) ZnO structures. The synthesis of 2D ZnO structures, the morphologies, and the photoluminescence emission will be reviewed and highlighted. The performance of the UV sensors based on 2D ZnO structures is explored.
4H-SiC Schottky Array Photodiodes for UV Imaging
The fabriion of high sensitive diodes array is very attractive for spectroscopic and astronomical UV imaging appliions, particularly when visible light rejection is required. Wide band gap materials are excellent candidates for UV “visible blind” detection. In this paper, we demonstrate an array of Schottky UV-diodes on 4H-SiC with a single pixel area of about 1.44 mm2 and a total
Marktech Expanded Photodetector Design and …
UV detectors, with spectral sensitivities from 150 nm to 570 nm, and further incorporating gallium phosphide (GaP), gallium nitride (GaN) and Silicon carbide (SiC) materials, for superior long-term stability, high device sensitivity and low dark current;
EPO - T 0615/07 () of 15.6.2009
2020-6-11 · In this respect the examining division had argued in the Consultation of 2 Noveer 2006 that a well known type of photodetector used in UV detectors of sterilizing systems are silicon carbide photodetectors and referred to document D2, page 4, lines 12 - 16.
High responsivity, self-powered carbon–zinc oxide …
A self-powered n-Si/C–ZnO/SiO2/p-Si heterojunction photodetector (PD) which comprises of carbon (C) and zinc oxide (ZnO) nanostructures on a n-type silicon (n-Si) substrate was prepared via vapor phase transport method. Excellent photodetection under 468 nm light illumination for powers ranging from 2.78 to 2910 µW delivered a quick response of about 9.5 µs.
Chinese Journal of Materials Research
Preparation and Properties of MoSi 2-Si 3 N 4 Anti-oxidation Coating for Recrystallized Silicon Carbide Fangxu NIU 1, 2, Yanxiang WANG 1, 2 (), Qun LIU 2, Abbas Imran 2, Chengguo WANG 1, 2 1 Key Laboratory for Liquid-Solid Structural Evolution and Processing
Two Dimensional Photodiode Array | Photodiode …
The PIN-4X4D is a 4 by 4 array of superblue enhanced Photodetectors. Our proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount appliions.
Si photodiodes CHAPTER 02 1 Si photodiodes
3 1. Si photodiodes 1 - 1 Operating principle Figure 1-1 shows a cross section example of a Si photodiode. The P-type region (P-layer) at the photosensitive surface and the N-type region (N-layer) at the substrate form a