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2010-1-4 · On a class of second order differential inclusions driven by the scalar p-Laplacian : NONLINEAR ANALYSIS-THEORY METHODS & APPLIIONS, 72 (1): 151-163 JAN 1 2010

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2006-11-13 · approach is adopted, in order to provide affordable environmental protection. This is achieved by the promotion of a waste management process. The process comprises three basic steps: waste avoidance, correct classifiion and minimum requirements for the safe handling, treatment and disposal of hazardous waste.

Enovix secures $45 million to produce its 3D Silicon

Enovix has developed a lithium-ion battery that incorporates a 100% active silicon anode using its patented 3D cell architecture to significantly increase energy density and maintain high cycle life. The company is backed by strategic relationships with Intel, Qualcomm and Cypress and over $200 million in venture, strategic and private funding.

Dry-etch selectivity - Applied Materials, Inc.

2015-3-3 · METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS: July, 2011: Ring et al. 7981806: Method for forming trench and method for fabriing semiconductor device using the same: July, 2011: Jung: 20110151678: NOVEL GAP FILL INTEGRATION: June, 2011: Ashtiani et al. 20110151677

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A new MoO 3 /Ni–NiO hybrid electroalyst is designed and synthesized via a novel sequential electrodeposition strategy, which exhibits excellent activity and durability for the overall water splitting process. Experimental and theoretical analysis demonstrate the improved hydrogen evolution performance should be mainly attributed to the Ni–NiO heterostructure, and the generated MoO 3

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Materials research for group IV semiconductors: …

Group IV semiconductors lie at the heart of many electronic and photovoltaic devices. Major challenges for fundamental research and technological development are no longer confined to bulk silicon, but also to other group IV materials and a wide variety of silicon-based structures, such as alloys, nanostructured and nanocomposite materials, composite systems, thin and thick films, and

Alumina | chemical compound | Britannica

Alumina, synthetically produced aluminum oxide, Al2O3, a white or nearly colourless crystalline substance that is used as a starting material for the smelting of aluminum metal. It also serves as the raw material for a broad range of advanced ceramic products and as an active agent in chemical

2018-7-4 · Silicon Carbide And Related Materials 2015 Roccaforte, Fabrizio 9783035710649 Advanced Materials for Technical and Medical Purpose Georgiy Osokin, Gennady E. Remnev, Valeriy Pogrebenkov, Sergey Psakhie, Nikolay Ratakhin TTP 9783035711158

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Thermoelectric properties of the 3C, 2H, 4H, and 6H

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2019-8-26 · Amorphous silicon is the most commonly developed and a non-crystalline allotropic form of silicon. It is most popular among thin film technology but it is prone to degradation. Some of the varieties of a-Si are amorphous silicon carbide (a-SiC), amorphous silicon germanium (a-SiGe), microcrystalline silicon (μ-Si) and amorphous silicon-nitride

Schottky Power Diodes Designed for Improved …

2018-12-11 · Silicon carbide (SiC) is a semiconductor material sold as substrates (like silicon is) for making semiconductor devices. It has advantages (compared to other semiconductors like silicon) regarding making devices that operate at high temperature, high electric fields and high current density.

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Evertiq - MLCC shortages create challenges in 2018

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Zinc oxide particles: Synthesis, properties and

The retort is generally heated from the outside using a natural gas or oil burner, although electric heating elements (silicon carbide) are in use in some plants. In the case of using dross from smelting or casting, Fe, Pb or Al-containing residues build up in the crucible and must be removed periodically [17].

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US8765574B2 - Dry etch process - Google Patents

A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench but thinner deep within the trench. The method described herein use a selective etch following formation of the inhomogeneous passivation layer.